IEC 62373-1:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method.

SDO:

IEC

Language:

English

ICS Codes:

31.080.30

Status:

Published

Publish date:

2020-07-14

Standard Number:

IEC 62373-1:2020